Byung-Du Ahn on Muck Rack

Byung-Du Ahn

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Articles

Lateral distribution of electrical defect concentration in SA TG coplanar IGZO TFTs extracted via low frequency noise analysis

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By Dong-Ho Lee, Jin-Ha Hwang, Chae-eun Oh, Hyuck-In Kwon, Jihee Ryu, Jae-Man Jang, Byung-Du Ahn, Jong-Uk Bae
| Nature Verified
Abstract This study presents a methodology for extracting the lateral distribution of electrical defect concentration (NB) associated with gate-insulator traps contributing to low-frequency noise (LFN) of self-aligned top-gate (SA TG) coplanar indium–gallium–zinc oxide (IGZO) thin-film transistors (TFTs) using low-frequency noise (LFN) analysis.
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