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Byung Oh Jung

As seen in: Nature
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Articles

All-InGaN/GaN red light-emitting diodes with low-temperature-grown GaN capping layer

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By Joonghoon Choi, Soyoung Yang, Jongil Kim, Chang Soo Kim, Jae Sung Hwang, Ji Won CHUNG, Ji-Hyeon Park, Dae-Woo Jeon, Inseong Cho, Sung-Min Hwang, In-Hwan Lee, Benjamin Kyle Derby, Jinkyoung Yoo, Dong-Soo Shin, Jaekyun Kim, Young Choi, Byung Oh Jung, Tae-In Kim, Joohan Bae, Jinwoo Jo, Guanning Shao, Minho Joo, Doosoo Kim
| Nature Verified
Abstract The growth of indium-rich InGaN red light-emitting diodes (LEDs) is essential for realizing all-nitride full-color micro-LED displays. This study presents a strategy for fabricating red LEDs with InGaN/GaN multiple quantum wells (MQWs) by introducing a low-temperature-grown GaN quantum-well capping (LT-GaN QC) layer, without the need for strain-engineered structures. The insertion of LT-GaN QC induces a significant electroluminescence (EL) wavelength shift of MQWs from 506 to 668 nm.
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