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Chahwan Yang

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Articles

Threshold‐Voltage Modulation and N2O Plasma Passivation for Enhanced Retention and Memory Window in Capacitorless 2T0C DRAM Oxide Thin‐Film Transistors

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By Mirinae Lee, Junghoon Han, Chahwan Yang
| Wiley Online Library Verified
1 Introduction In the era of artificial intelligence (AI) and data-centric computing, the volume of processed data and the complexity of computations have grown explosively. As AI models become more complex, the memory subsystem has become a critical performance bottleneck [1-4]. This widening gap between processor capability and memory bandwidth has created severe challenges in energy efficiency and scalability, especially in von Neumann architectures.
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