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Natively oxidized 2D NbSe2 enables ultralow-power electrical switching
Natively oxidized 2D NbSe2 enables ultralow-power electrical switching In the context of the burgeoning information technology industry, the exponential growth in data storage and processing requirements has become increasingly evident. Threshold switching devices stand out as a pioneering solution with enhanced speed, superior integration, and lower power consumption, marking a significant stride in technological progress.
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