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Stacked indium oxide/zinc oxide heterostructures as semiconductors in thin film transistor devices: A case study using atomic layer deposition.

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By Joerg J Schneider, Shawn Sanctis, Jan Krausmann, Conrad Rudolf Guhl
| Royal Society of Chemistry Verified
Multi-layer heterostructure oxide semiconductors employing a layer-by-layer deposition of alternating indium oxide and zinc oxide thin films generated via atomic layer deposition (ALD) are investigated for their feasibility into high performance thin film transistors (TFT). The successful deposition of uniform film thickness across the alternating indium oxide and zinc oxide deposition at 200°C is achieved using trimethyl indium (TMI), diethyl zinc (DEZ) and water as oxidizing agent.
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