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Real time investigation of double magnetic tunnel junction with a switchable assistance layer for high efficiency STT-MRAM

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By L. Vila, D. Sanchez Hazen, D. Salomoni, S. Auffret
| AIP Publishing
Perpendicular Spin Transfer Torque Magnetic Random Access Memory (p-STT-MRAM) still requires improvements to be usable for fast cache applications.11. P. Barla, V. K. Joshi, and S. Bhat, J. Comput. Electron. 20, 805–837 (2021). https://doi.org/10.1007/s10825-020-01648-6 To be able to replace Static Random Access Memory (SRAM), p-STT-MRAM needs to combine high speed and endurance, which implies switching voltages well below the dielectric breakdown voltage and, therefore, low critical switching current.
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