Daniele Barettin

Abstract : The synthesis of crystals with a high surface-to-volume ratio is essential for innovative, high-performance electronic devices and sensors. The easiest way to achieve this in integrated devices with electronic circuits is through the synthesis of high-aspect-ratio nanowires aligned vertically to the substrate surface.

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3. Results Using the models and parameters outlined in the preceding section, we conducted 8-band k → · p → calculations that incorporated electromechanical fields. Our aim was to evaluate the quantum confinement in three distinct configurations: an AlGaAs nanowire with an embedded GaAs QD with a height equal to 3.75, 4.45, and 11.2 nm, respectively. In , we present the 2D representation of the conduction and valence bands in an x z plan of these configurations.