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Articles by De Dai

4 inch Gallium Oxide Field‐Effect Transistors Array with High‐k Ta2O5 as Gate Dielectric by Physical Vapor Deposition

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By Zi Chun Liu, Hui Yang, An Huang, De Dai
| Wiley Online Library Verified
Conflict of Interest The authors declare no conflict of interest. Supporting Information Filename Description pssr202400046-sup-0001-SuppData-S1.pdf2.1 MB Supplementary Material References 1 , , , , , , , Appl. Phys. Rev. 2018, 5, 011301. 2 , , , , J. Appl. Phys. 2018, 124, 220901. 3 , , , , , Appl. Phys. Lett. 2012, 100, 013504. 4 , , , , , , , , , , , , , IEEE Electron Device Lett. 2016, 37, 902. 5 , , , , , Appl. Phys. Lett. 2020, 117, 222102. 6 , , , , , , , , , , , , Appl. Phys. Lett. 2022, 121, 072108.
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1-Selector 1-Memristor Configuration with Multifunctional a-IGZO Memristive Devices Fabricated at Room Temperature

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By Yuan Xiao Ma, Ying Ding, Zi Chun Liu, De Dai
| dx.doi.org
RETURN TO ARTICLES ASAPPREVFunctional Inorganic...Functional Inorganic Materials and DevicesNEXT Jia Cheng Li The School of Integrated Circuits and Electronics, and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China , * Yuan Xiao Ma The School of Integrated Circuits and Electronics, and Yangtze Delta Region Academy, Beijing Institute of Technology, Beijing 100081, China *Email: yxma@bit.edu.cn , Song Hao Wu The School of Integrated Circuits and Electronics,...
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