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Articles

Tuning Ultra‐Narrow Direct Bandgap in α‐Sn Nanocrystals: A CMOS‐Compatible Approach for THz Applications

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By Elena Stellino, Tiziano Bertoli, DIET Sapienza, Francesco Minati
| Wiley Online Library Verified
1 Introduction Group IV semiconductors have been attracting considerable attention due to their intrinsic potential for integrated technologies compatible with the CMOS paradigm based on Si.[1-3] After the pioneering work of He and Atwater in 1997,[4] in the last few years the possibility of inducing a direct bandgap in Ge1-xSnx thin films, nanowires, and nanocrystals[1, 5-12] has been widely investigated.
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