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Donati Guerrieri

As seen in: MDPI
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Articles

TCAD Modeling of GaN HEMT Output Admittance Dispersion through Trap Rate Equation Green’s Functions

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By Eva Catoggio, Simona Donati Guerrieri, Fabrizio Bonani, Donati Guerrieri
| MDPI
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Analysis of Doherty Power Amplifier Matching Assisted by Physics-Based Device Modelling

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By Fabrizio Bonani, Simona Donati Guerrieri, Eva Catoggio, Donati Guerrieri
| MDPI
Abstract : The Doherty Power Amplifier represents one of the most promising solutions for the design of high-efficiency power stages. In the widely adopted ABC scheme, the Doherty Amplifier design critically depends on the accuracy of the device model in different operating conditions, ranging from class AB to class C.
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