E. Kumi-Barimah
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Erbium-doped chalcogenide glass thin film on silicon using femtosecond pulsed laser with different deposition temperatures
Abstract The properties of Er3+-doped gallium lanthanum sulphide thin films prepared on a silicon substrate by femtosecond pulsed laser deposition were studied as a function of process temperature. The films were characterised using transition electron microscopy imaging, X-ray diffractometry, Raman spectroscopy, fluorescence spectroscopy, and UV–Vis–NIR spectroscopy.
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