Eilam Yalon

Abstract Radiofrequency (RF) switches are pervasive in modern communication and connectivity systems such as cellular networks, satellite communications and radar systems. Contemporary systems typically use transistor RF switches; however, owing to the growing demand for devices with high speeds, reliability and energy efficiency, research into alternative materials and devices, particularly those based on non-volatile switching physics, is expanding.

Abstract Recent research on two-dimensional (2D) transition metal dichalcogenides (TMDCs) has led to remarkable discoveries of fundamental phenomena and to device applications with technological potential. Large-scale TMDCs grown by chemical vapor deposition (CVD) are now available at continuously improving quality, but native defects and natural degradation in these materials still present significant challenges.

Abstract Atomically thin two-dimensional materials—including transitional metal dichalcogenides and hexagonal boron nitride—can exhibit non-volatile resistive switching. This switching behaviour could be used to create analogue switches for use in high-frequency communication, but has so far been limited to frequencies relevant to the fifth generation of wireless communication technology.