Elison Matioli

Abstract III-nitride semiconductors combine a wide bandgap with low sheet resistance and, thus, can be used for efficient power electronics. Their lateral architecture also enables monolithic integration on cost-effective silicon. However, electric-field crowding, as well as surface and buffer trapping, limit the breakdown voltage, degrade dynamic performance and reduce reliability. Here we report intrinsic polarization superjunctions in III-nitride heterostructures for efficient power electronics.

Abstract The evolution of electronics has largely relied on downscaling to meet the continuous needs for faster and highly integrated devices1. As the channel length is reduced, however, classic electronic devices face fundamental issues that hinder exploiting materials to their full potential and, ultimately, further miniaturization2.

Abstract Thermal management is one of the main challenges for the future of electronics1,2,3,4,5. With the ever-increasing rate of data generation and communication, as well as the constant push to reduce the size and costs of industrial converter systems, the power density of electronics has risen6.