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Size Control and Photoluminescence Characteristics of InSb Quantum Dots on GaSb Substrates Grown by Molecular Beam Epitaxy
1 Introduction Optical gas sensors operating in the midinfrared region (from 2 to 5 μm) are in increasing demand in various fields. Since nondispersive infrared (NDIR)-type sensors[ 1 ] can detect gas molecules without chemical reactions, the NDIR sensors are suitable for applications such as gas detection in factories. To improve the detection accuracy of the gas sensors, it is necessary to increase the luminescence intensity of the light-emitting diodes (LEDs) as the light source.
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