Enrique Del Barco

Abstract The poor performance of molecular transistors is a major bottleneck for developing ultra-miniaturized integrated circuits. To date, the absence of a design-led strategy to systematically enhance the performance of fundamental molecular circuit components, coupled with sub-optimal device fabrication yields, has posed significant barriers to the widespread adoption and practical implementation of nanoelectronics.

Abstract To develop new types of dynamic molecular devices with atomic-scale control over electronic function, new types of molecular switches are needed with time-dependent switching probabilities. We report such a molecular switch based on proton-coupled electron transfer (PCET) reaction with giant hysteric negative differential resistance (NDR) with peak-to-valley ratios of 120 ± 6.6 and memory on/off ratios of (2.4 ± 0.6) × 103.

In a non-collinear antiferromagnet, elementary spins rotate with opposite handedness with respect to the collective octupole magnetic moment when stirred by spin currents. The reorientation and excitation of magnetic moments in magnetic materials by injecting currents is fundamental to the field of spintronics and its wide range of applications. Currently, one of the most relevant applications involves the utilization of ferromagnets in advanced semiconductor memory devices1.