Enzi Chen

Controlling carrier polarity in 2D semiconductors is essential for complementary electronics but is hindered by Fermi-level pinning. Here, we demonstrate contact engineering in 2H-MoTe2 using high-work-function Pt and low-work-function Bi to realize p-type and n-type field-effect transistors. An asymmetric Pt/2H-MoTe2/Bi configuration enables a self-powered broadband photodetector with a 430–1400 nm response, a maximum responsivity of 1.06 A/W, and a detectivity of 1.86 × 1012 Jones.

1. Introduction Click to copy section linkSection link copied! Two-dimensional (2D) materials such as transition metal chalcogenides (TMDCs) are considered promising candidates for next-generation electronic devices, thanks to their atomically thin body thickness. (1−7) Among TMDCs, MoTe2 has garnered considerable attention in recent years due to its unique physical and chemical properties.