Eun Chong Cho

1 Introduction Area-selective atomic layer deposition (AS-ALD) is a promising fabrication technique for advanced semiconductor devices because it enables film growth exclusively on the target surface, while suppressing nucleation on nongrowth surfaces [1, 2]. As device architectures evolve toward higher integration densities and increasingly complicated high-aspect-ratio geometries, the fraction and complexity of nongrowth regions inevitably increase.

Abstract Click to copy section linkSection link copied! Continuous device scaling has driven the demand for nanoscale patterning, where area-selective atomic layer deposition (AS-ALD) offers a promising bottom-up alternative to conventional lithography. Here, we investigate small molecular inhibitors (SMIs), tri(dimethylamino)phenylsilane (TDMAPS) with an aminosilane headgroup and trimethoxyphenylsilane (TMPS) with a methoxysilane headgroup, for selective Ru ALD.