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SrTiO3 and (Ba,Sr)TiO3 Films Epitaxially Grown on SrRuO3 Using Atomic Layer Deposition

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By Bo-Eun Park, Jaeho Lee, Jeongil Bang, Euncheol Do
| dx.doi.org
1. Introduction Click to copy section linkSection link copied! To improve dynamic random access memory (DRAM) performance, high-dielectric-constant (k) materials for capacitors have been explored, coupled with advancements in memory architecture. Over time, high-k materials like Al2O3, ZrO2, and HfO2 have replaced SiO2, allowing for the scaling down of the equivalent oxide thickness (EOT) in accordance with Moore’s law until the mid-2010s.
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