Fabia Farlin Athena on Muck Rack

Fabia Farlin Athena

As seen in: Royal Society of Chemistry
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Articles

Towards a Better Understanding of the Forming and Resistive Switching Behavior of Ti-Doped HfOx RRAM

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By Riley Hanus, Samuel Graham, Fabia Farlin Athena, Jinho Hah
| Royal Society of Chemistry Verified
Towards a Better Understanding of the Forming and Resistive Switching Behavior of Ti-Doped HfOx RRAM HfOx-based resistive random-access memory (RRAM) devices are being widely considered as both non-volatile memories for digital computation and synaptic memory for neuromorphic computing applications. The resistive switching mechanism in these materials is known to be highly dependent on the presence of oxygen vacancies and other dopants.
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