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Fangying Jiao

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Articles

Suppressing Structural Relaxation in Nanoscale Antimony to Enable Ultralow‐Drift Phase‐Change Memory Applications

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By Bin Lin Chen, Xue-Peng Wang, Fangying Jiao, Long Ning
| Wiley Online Library Verified
Film Preparation and Characterization Sb thin film was prepared by sputtering Sb target (with purity of 99.999%) via physical vapor deposition (PVD) under ultrahigh vacuum with a base pressure of <≈2 × 10−7 Torr. The deposition rate was controlled to be ≈0.6 nm min−1. Atomic force microscope was then employed to characterize the surface morphology and thickness of the Sb and SiO2 films. The morphology and crystallinity were further confirmed by HRTEM (JEOL JEM-2100F) at high tension of 200 kV.
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