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Florian Bartoli

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Articles

ScAlN/GaN High Electron Mobility Transistor Heterostructures Grown by Ammonia Source Molecular Beam Epitaxy on Silicon Substrate

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By Caroline Elias, Sébastien Chenot, Florian Bartoli
| Wiley Online Library Verified
1 Introduction ScAlN is a wide bandgap semiconductor with very large piezoelectric and spontaneous polarization coefficients[1, 2] that induce a very high charge density at the interface with GaN.[3] Moreover, ScxAl1−xN alloy with x = 0.14–0.18 can be grown strain-free (lattice-matched) on GaN, which makes this alloy a promising barrier layer candidate for high electron mobility transistors (HEMTs) in view of power switching and radio frequency (RF)/millimeter wave power amplifier...
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