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Fong-Zhi Chen

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High-transconductance molybdenum disulfide top-gate transistors using epitaxial interface engineering

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By Shih-Ting Wang, Hsin-Ya Sung, Chih-Yen Lin, Yu-Tung Lin, Kun-An Chiu, Ming-Yang Li, Wen-Wei Wu, Chao-Ching Cheng, Iuliana Radu, Wen-Hao Chang, Yuan-Chun Su, Po-Sen Mao, Chih-Yao Shih, Yun-Yang Shen, Zih-Siang Jian, Hsiang-Chi Hu, Wei-Chen Tseng, Zi-Yun Fong, Fong-Zhi Chen, Chih-I. Wu, Tsung-En Lee
| Nature Verified
Abstract High transconductance is a key performance metric in field-effect transistors, directly influencing voltage gain, switching speed and bandwidth. In two-dimensional field-effect transistors, achieving a high transconductance requires a low equivalent oxide thickness, scaled channel length and preserved carrier mobility—three factors that are difficult to optimize simultaneously.
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