GeePs Group

1 Introduction The final goal of this work is to extract the active dopant density of micrometric size GaAs crystals grown on silicon for the further optimization of III–V on silicon multijunction solar cells. The integration of these crystals in a regular way to have a quasicomplete covering of the Si substrate, without coalescence of the GaAs microcrystals to maintain their very good electronic properties, would be very useful to develop III–V/Si tandem cells.