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Abstract The increasing demand for higher capacitance densities in dynamic random-access memory (DRAM) has necessitated the integration of high-k dielectric materials. SrTiO3 (STO) has emerged as a promising candidate owing to its high dielectric constant of over 100 in thin-film form. Selection of bottom electrode materials with superior lattice matching with STO is crucial to achieve a high dielectric constant for STO.
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