Global Foundries Dresden

This study investigates the short-term (µs to s timespan) charge trapping effects in hafnium oxide-based ferroelectric field-effect transistors, integrated within GlobalFoundries’ 28 nm bulk high-k metal gate (HKMG) technology. Even without ferroelectric switching, positive gate voltage pulses can cause significant short-term electron trapping due to strong energy band bending that enables charge injection.

Reconfigurable Field-Effect Transistors are fully CMOS-compatible emerging devices capable of changing between n-type and p-type characteristics during runtime. This inherent polymorphism extends to the logic gate level, enabling circuit obfuscation beyond what can be achieved with traditional CMOS devices. In order to exploit these capabilities, especially for embedded security solutions at the edge, it is crucial that the devices operate at low voltages to minimize power consumption.

Abstract Externe IDs PubMed 38215318