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Guijiu Xie

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Articles

Sidewall Modification Process for Trench Silicon Power Devices

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By Lei Jin, Zhuorui Tang, Long Chen, Guijiu Xie
| MDPI
1. Introduction As with rapid developments in consumer electronics and electric vehicles, silicon power devices play an increasingly crucial role [1]. Compared with silicon planar devices, which were the main application devices, trench structures enable a much smaller drain on resistance (Rdson) for the same chip area, significantly reducing overall conduction losses [2,3].
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