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Articles

NDR-effect vertical-illumination-type Ge-on-Si avalanche photodetector

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By Jin Oh, Sanghoon Kim, Gyungock Kim, Ki-Seok Jang
| osapublishing.org
We present the enhanced performances of a vertical-illumination-type Ge-on-Si avalanche photodetector based on internal RF-gain effects operating up to 50 Gb/s. A fabricated Ge-on-Si avalanche photodetector (APD) exhibits three operational voltage regions associated with different aspects of the current (DC) gain and bandwidth characteristics.
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