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Hadass S. Inbar on Muck Rack

Hadass S. Inbar

As seen in: ACS Publications, Science Magazine, Physical Review B
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Articles

Growth and characterization of $\ensuremath{\alpha}$-Sn thin films on In- and Sb-rich reconstructions of InSb(001)

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By Aaron Engel, Connor Dempsey, Hadass S. Inbar
| Physical Review B
α-Sn thin films can exhibit a variety of topologically nontrivial phases. Both studying the transitions between these phases and making use of these phases in eventual applications requires good control over the electronic and structural quality of α-Sn thin films. α-Sn growth on InSb often results in out-diffusion of indium, a p-type dopant.
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Strain Solitons in an Epitaxially Strained van der Waals-like Material

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By Jason Dong, Hadass S. Inbar, Connor Dempsey, Aaron Engel
| ACS Publications
Download Hi-Res ImageDownload to MS-PowerPointCite This:Nano Lett. 2024, XXXX, XXX RETURN TO ARTICLES ASAPPREVLetterNEXT , , Connor P. Dempsey Deparment of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, United States , , and * Christopher J.
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Controlling magnetoresistance by tuning semimetallicity through dimensional confinement and heteroepitaxy

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By Shoaib Khalid, Shouvik Chatterjee, Hadass S. Inbar, Aranya Goswami
| Science Magazine Verified
RESULTS AND DISCUSSION Growth and transport Epitaxial thin films of rock-salt LuSb (6.055 Å) (18) were synthesized on a nearly lattice-matched GaSb substrates (6.096 Å) with a thin GaSb epitaxial buffer layer using molecular-beam epitaxy (MBE). The c(2 × 6) reconstruction of the Sb-rich GaSb(001) surface immediately changes to a (1 × 1) reconstruction at the beginning of the deposition of LuSb atomic layers, shown in Fig. 1B.
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