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Haengha Seo

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Articles

Understanding phase evolution of ferroelectric Hf0.5Zr0.5O2 thin films with Al2O3 and Y2O3 inserted layers

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By Seungyong Byun, Jonghoon Shin, Kun Ye, Haengha Seo
| Royal Society of Chemistry Verified
Understanding phase evolution of ferroelectric Hf0.5Zr0.5O2 thin films with Al2O3 and Y2O3 inserted layers† This study investigates the insertion traits of the Al2O3 and Y2O3 insertion layers (ILs) and their effects on the phase evolution and electrical characteristics of polycrystalline Hf0.5Zr0.5O2 (HZO) thin films grown by atomic layer deposition (ALD). The Al2O3 and Y2O3 ILs are located at the middle position along the HZO film.
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