Haksoon Jung

1 Introduction Modern microelectronics is evolving from cramming more transistors onto a two-dimensional integrated circuit toward monolithic three-dimensional (M3D) integration [1-3] This shift reflects the growing difficulty of sustaining performance and energy-efficiency gains through lateral scaling alone, particularly in data-intensive computing workloads [4, 5] M3D integration of dense memory layers directly atop silicon complementary metal oxide semiconductor (CMOS) enables...

Abstract Two-dimensional (2D) indium selenide (In2Se3) has great potential for next-generation processing-in-memory applications owing to high intrinsic carrier mobility and strong ferroelectricity. However, the lack of wafer-scale, back-end-of-line (BEOL) compatible growth and inherent polarization-induced hysteresis limit their viability in logic circuits. Here, we report thermal evaporation of a non-ferroelectric κ-phase In2Se3 film that forms uniformly over 4-inch wafer-scale at <450 °C.