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Hanggyo Jung

As seen in: Wiley Online Library
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Articles

Spiking Neural Network Integrated with Impact Ionization Field‐Effect Transistor Neuron and a Ferroelectric Field‐Effect Transistor Synapse

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By Byung Chul Jang, Haeju Choi, Sungpyo Baek, Hanggyo Jung
| Wiley Online Library Verified
Conflict of Interest The authors declare no conflict of interest. Supporting Information Filename Description adma202406970-sup-0001-SuppMat.pdf1.6 MB Supporting Information References 1, , , , , , , , , , Nature 2023, 618, 57. 2, , , , , , , Adv. Mater. 2022, 34, 2202535. 3, , , , , Nat. Comput. Sci. 2022, 2, 10. 4, , , , , , , , , , Nature 2016, 529, 484. 5, , Nat. Mater 2019, 18, 309. 6, , , Nat. Electron 2018, 1, 22. 7, , , Adv. Intell. Sys. 2021, 3, 2100007. 8, , , , , Adv. Funct. Mater. 2022, 32, 2204102.
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Spiking Neural Network Integrated with Impact Ionization Field‐Effect Transistor Neuron and a Ferroelectric Field‐Effect Transistor Synapse

|
By Byung Chul Jang, Haeju Choi, Sungpyo Baek, Hanggyo Jung
| Wiley Online Library Verified
Conflict of Interest The authors declare no conflict of interest. Supporting Information Filename Description adma202406970-sup-0001-SuppMat.pdf1.6 MB Supporting Information References 1, , , , , , , , , , Nature 2023, 618, 57. 2, , , , , , , Adv. Mater. 2022, 34, 2202535. 3, , , , , Nat. Comput. Sci. 2022, 2, 10. 4, , , , , , , , , , Nature 2016, 529, 484. 5, , Nat. Mater 2019, 18, 309. 6, , , Nat. Electron 2018, 1, 22. 7, , , Adv. Intell. Sys. 2021, 3, 2100007. 8, , , , , Adv. Funct. Mater. 2022, 32, 2204102.
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High‐κ dielectric (HfO2)/2D Semiconductor (HfSe2) Gate Stack for Low‐Power Steep‐switching Computing Devices

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By Taeho Kang, Joonho Park, Haeju Choi, Hanggyo Jung
| Wiley Online Library Verified
Herein, we report a high-quality gate stack (native HfO2 formed on 2D HfSe2) fabricated via plasma oxidation, realizing an atomically sharp interface with a suppressed interface trap density (Dit ∼ 5×1010 cm−2 eV−1). The chemically converted HfO2 exhibits dielectric constant, κ ∼ 23, resulting in low gate leakage current (∼10−3 A/cm2) at EOT ∼0.5 nm.
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