Hengfang Zhang on Muck Rack

Hengfang Zhang

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Articles

Electronic Properties of Group-III Nitride Semiconductors and Device Structures Probed by THz Optical Hall Effect

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By Nerijus Armakavicius, Philipp Kühne, Alexis Papamichail, Hengfang Zhang
| MDPI
All articles published by MDPI are made immediately available worldwide under an open access license. No special permission is required to reuse all or part of the article published by MDPI, including figures and tables. For articles published under an open access Creative Common CC BY license, any part of the article may be reused without permission provided that the original article is clearly cited. For more information, please refer to https://www.mdpi.com/openaccess.
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