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Chemical fixation of SO2 using norbornene with different side-chain groups and control the physical properties of the poly(olefin sulfone)
Photoresists of polymer solubility and degradation play a crucial role in the manufacture of integrated circuits by photolithography. Conventional photoresists typically rely on a single switching mechanism based on either a change in polarity or, molecular weight of the polymer. Here we report a new type of poly(olefin sulfone) as photoresists which overcomes the drawback of the poor dry etching resistance, solubility and thermal degradation.
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