Open Appl. Phys. Lett. 120, 252101 (2022); https://doi.org/10.1063/5.0095827 We report on the low-energy electron irradiated 4H-SiC material studied by means of deep-level transient spectroscopy (DLTS) and Laplace-DLTS. Electron irradiation has introduced the following deep level defects: EH1 and EH3 previously assigned to carbon interstitial-related defects.