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Ihit Shukla on Muck Rack

Ihit Shukla

As seen in: Nature
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A 7-eV bandgap semiconductor based on silicon-doped α-(Al x Ga 1− x ) 2 O 3

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By Jacob Steele, Debaditya Bhattacharya, Naomi Pieczulewski, Viet-Anh Ha, Nick Pant, Shaon Kumar Das, Ufuk Kilic, Madhav Ramesh, Feliciano Giustino, Baishakhi Mazumder, Michael Williams, Mathias Schubert, David Muller, David Müller, Huili G. Xing, Debdeep Jena, Kazuki Nomoto, Preston Sorensen, Ihit Shukla, M. K. Indika Senevirathna, Darrell. G. Schlom
| Nature Verified
Abstract In rectifying power electronics, wider-bandgap (Eg) semiconductors allow higher efficiency and power density with the Baliga figure of merit proportional to Eg5.5 (refs. 1,2). Unfortunately, the unique ability of semiconductors to have their conductivities controllably modulated over orders of magnitude by equilibrium doping methods becomes increasingly elusive as the bandgap increases.
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