Ivan Sergeev

Error compensated MOF-based ReRAM array for encrypted logical operations† Metal–organic frameworks (MOFs) form a unique platform for operation with data using ReRAM technology. Here we report on a large-scale fabrication of a MOF-based ReRAM array with 6 × 6 cells, demonstrating 50% variation in their electronic parameters. Despite this inhomogeneity, such a “non-ideal” ReRAM array is used for recording binary information followed by deep learning processes to achieve 95% accuracy of reading.

Error compensated MOF-based ReRAM array for encrypted logical operations Metal-organic frameworks (MOFs) form a unique platform for operating with data using ReRAM technology. Here we report on a large-scale fabrication of MOF-based ReRAM array with 6x6 cells, demonstrating 50 % variation of their electronic parameters. Despite this inhomogeneity, such "non-ideal" ReRAM array is used for recording binary information followed by deep learning processes to achieve 95 % of accuracy of reading.