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James Spencer Lundh

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Articles

Electrothermal Performance of AlGaN/GaN Lateral Transistors with >10 μm Thick GaN Buffer on 200 mm Diameter‐Engineered Substrates

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By Patrick Waltereit, Stefan Müller, Lutz Kirste, James Spencer Lundh
| Wiley Online Library Verified
Abstract Herein, the electrical and thermal performance of lateral AlGaN/GaN high electron mobility transistors (HEMTs) and metal-insulator-semiconductor field effect transistors (MISFETs) fabricated with 11 μm thick GaN buffer layers on 200 mm diameter Qromis Substrate Technology (QST) substrates are investigated.
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