Jinseong Heo

Abstract Piezoresponse force microscopy (PFM), a lock-in-based mode of atomic force microscopy (AFM), enables sensitive ferroelectric domain imaging. However, fast imaging for either massive measurements or studying fast dynamic behavior remains challenging because it suffers from a fundamental trade-off between fast acquisition and high signal quality.

Abstract INTRODUCTION RESULTS AND DISCUSSION MATERIALS AND METHODS Acknowledgments Supplementary Materials REFERENCES Information & Authors Metrics & Citations View Options References Figures Tables Media Share Abstract Unlike perovskite-based ferroelectrics, whose polarization typically diminishes at reduced thickness, doped hafnia films retain robust ferroelectricity down to 1-nanometer thickness.

Abstract NAND flash memory is essential in modern storage technology, amid growing demands for low-power operation fuelled by data-centric computing and artificial intelligence1,2. Its unique ‘string’ architecture3, where multiple cells are connected in series, requires high-voltage pass operation that causes a large amount of undesired power consumption4.