Johannes D. Bartl

1 Introduction In addition to its widespread use in solid-state lighting applications, gallium nitride (GaN) has attracted increasing interest for its potential to replace or enhance Si-based complementary metal oxide semiconductor (CMOS) technology.

Hybrid inorganic/organic heterointerfaces are promising systems for next-generation photocatalytic, photovoltaic, and chemical-sensing applications. Their performance relies strongly on the development of robust and reliable surface passivation and functionalization protocols with (sub)molecular control. The structure, stability, and chemistry of the semiconductor surface determine the functionality of the hybrid assembly.

Abstract Nanostructured 2D transition metal dichalcogenides play an increasingly important role in heterogeneous catalysis. These materials are abundant (co-)catalysts with tunable properties to catalyze a number of key reactions related to energy provision, for instance the hydrogen evolution reaction (HER). It is vital to understand which surface sites are active in order to maximize their number and to improve the overall (photo-)catalytic behavior of those materials.