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Articles by Jong-Heon Yang
3D height-alternant island arrays for stretchable OLEDs with high active area ratio and maximum strain - Nature Communications
Abstract Stretchable optoelectronic devices are typically realized through a 2D integration of rigid components and elastic interconnectors to maintain device performance under stretching deformation. However, such configurations inevitably sacrifice the area ratio of active components to enhance the maximum interconnector strain.
Benzylphosphonic Acid treated Ultra-thin ALD-InOx for Long term Device Stability.
Benzylphosphonic Acid treated Ultra-thin ALD-InOx for Long term Device Stability. In this paper, we demonstrate the long-term stability of the threshold voltage (Vth) of ultra-thin indium oxide (In2O3) TFTs fabricated by atomic layer deposition (ALD) and modified with self-assembled monolayers (SAMs) using benzylphosphonic acid (BPA). By forming a self-assembled monolayer of BPA, it was possible to modify the surface to be hydrophobic and lower surface energy as low as 24 mJ/m2.
Stretchable OLEDs based on a hidden active area for high fill factor and resolution compensation - Nature Communications
Abstract Stretchable organic light-emitting diodes (OLEDs) have emerged as promising optoelectronic devices with exceptional degree of freedom in form factors. However, stretching OLEDs often results in a reduction in the geometrical fill factor (FF), that is the ratio of an active area to the total area, thereby limiting their potential for a broad range of applications.
Characteristics of Ultrathin Indium Oxide Thin‐Film Transistors with Diverse Channel Lengths Fabricated by Atomic Layer Deposition
1 Introduction The advent of amorphous oxide semiconductors has become a game changer for the backplane industry in place of amorphous silicon (a-Si:H).[1-6] This means these semiconductors meet the technical specifications for the next generation of display back-plane technology.
Characteristics of Ultrathin Indium Oxide Thin‐Film Transistors with Diverse Channel Lengths Fabricated by Atomic Layer Deposition
1 Introduction The advent of amorphous oxide semiconductors has become a game changer for the backplane industry in place of amorphous silicon (a-Si:H).[1-6] This means these semiconductors meet the technical specifications for the next generation of display back-plane technology.
Role of oxygen in dramatically enhancing the electrical properties of solution-processed Zn-Sn-O thin-film transistors
The mechanism of forming metal-oxide-metal (M-O-M) bonds in solution-processed metal oxide semiconductors can vary depending on the types of precursors used. To date, metal-alkoxide or metal-chloride precursors have mainly been studied; therefore, efforts to improve the device characteristics of oxide thin-film transistors (TFTs) have been limited to these types of precursors.
Solution-processed indium-free ZnO/SnO2 bilayer heterostructures as a low-temperature route to high-performance metal oxide thin-film transistors with excellent stabilities - Journal of Materials Chemistry C (RSC Publishing)
The realization of high performance solution-processble metal oxide thin-film transistors (TFTs) with low annealing temperatures remains a challenge in the field of flexible and/or transparent electronics. Indium-based metal oxides are one of the most widely used materials as channel layers of metal oxide TFTs. However, the need for developing indium-free metal oxide materials has grown urgent because of the high cost and limited supply of indium.
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