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Joocheol Jeong

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Articles

Al‐Rich AlGaN Channel/AlN Buffer High‐Electron‐Mobility Transistor with Superlattice Structure

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By JooYong Park, Joocheol Jeong, Shyam Mohan, Joonhyuk Lee
| Wiley Online Library Verified
1 Introduction Wide bandgap (WBG) III-nitride high-electron-mobility transistors (HEMTs) have emerged as indispensable components in high-power and high-frequency applications.[1-3] Their superior material properties, including high electron mobility, WBG energy, and high critical breakdown electric field, make them ideal for next-generation power electronics such as electric vehicles, energy-efficient power converters, and radio frequency amplifiers.[4, 5] Among these, GaN-based HEMTs are...
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Vertical GaN PIN Structure with Intrinsic AlGaN Drift Layer Grown Using Metal‐Organic Chemical Vapor Deposition

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By Yunseok Heo, Joocheol Jeong, Shyam Mohan, Minho Kim
| Wiley Online Library Verified
1 Introduction In recent years, there has been a growing emphasis on power semiconductors resulting in a surge in research activities in this area. Consequently, there has been an active pursuit of research on gallium nitride (GaN).
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Size‐Dependent Characteristics of InGaN‐Based Blue and Green Micro‐Light‐Emitting Diodes

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By Shyam Mohan, Minho Kim, Yunseok Heo, Joocheol Jeong
| Wiley Online Library Verified
Conflict of Interest The authors declare no conflict of interest. References 1 , , , The Blue Laser Diode: The Complete Story, Springer, Berlin 2000. 2 , Handbook of Nitride Semiconductors and Devices, Vol. 3, Wiley–VCH Verlag GmbH, Germany 2008. 3 , , , , , , , Rep. Prog. Phys. 2016, 79, 056501. 4 , , Rep. Prog. Phys. 2017, 80, 106501. 5 , , J. Appl. Phys. 2022, 132, 06090314. 6 , , Superlattices Microstruct. 2008, 43, 1. 7 , , , , , , Laser Photonics Rev. 2022, 16, 2100427. 8 , , , J. Phys. D: Appl. Phys.
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