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Low temperature radical initiated hydrosilylation of silicon quantum dots Timothy T. Koh, †a Tingting Huang,†a Joseph Schwan,b Pan Xia, c Sean T. Roberts, *d Lorenzo Mangolini *bc and Ming L.
A set of experiments were performed using the top or bottom filaments. With the top filament setup, the hopping of the dust particles was recorded (Figure 3a). In contrast, the dust particles remained at rest when using the bottom filament. It has been measured that the vertical electric field at the surface was approximately same (16 V/cm) in both experiments under the conditions described in Protocol step 226.
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