Jun-Hui Choi

1 Introduction The scaling of conventional electronic and optoelectronic components including field-effect transistors (FETs),[1, 2] semiconductor lasers,[3] LEDs,[4] and photodetectors[5, 6] has encountered fundamental bottlenecks, primarily due to short-channel effects,[7] enhanced Coulomb and surface roughness scattering,[8] and deteriorated electrostatic gate control.[9] These limitations have imposed significant constraints on further miniaturization and the advancement of Moore's law.

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