June-Hyuk Lee

1 Introduction Complex oxides in thin film form offer new and exciting strategies for meeting many technological challenges. Strongly correlated oxides, in particular, offer a myriad of ground states [1], and their interfacial properties suggest the potential development of novel devices in the field of oxide electronics [2-4]. The synthesis of the oxide must be controlled precisely, however, as the composition and stacking of each atomic plane can be critical to the resulting properties.