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Articles by Junming An
Quantum state preparation of time-bin encoding based on SOI integrated chips
Quantum key distribution (QKD) ensures unconditional security for public key encryption by utilizing the principles of quantum mechanics. This study designs and fabricates a QKD chip based on the silicon-on-insulator (SOI) platform, employing a time-bin encoding scheme with decoy states.
Compact thin-film lithium niobate dual-stage intensity modulator with ultrahigh linearity
The linearity of modulators fundamentally determines the critical performance of microwave-to-optical signal conversion in photonic systems. This work presents a compact dual-stage cascaded intensity modulator based on thin-film lithium niobate (TFLN), which overcomes the linearity constraints of conventional Mach–Zehnder modulators (MZMs) through an innovative two-stage architecture.
Polarization-insensitive 90° optical hybrid using silica-based PLC
Abstract A 90° optical hybrid (OH) based on a ${{4}} \times {{4}}$ multimode interference (MMI) coupler is characterized and analyzed using the silica-based planar light circuit. The OH is designed to be polarization-insensitive with an extremely low polarization-dependent loss (${\lt}{0.18}\;{\rm{dB}}$) and phase error (${\rm{within}}\;{\rm{\pm 1}.{3}}^\circ)$. The fabricated chip exhibits an excess loss of 3.4 dB and 3.8 dB for TE and TM polarizations at 1550 nm.
Optimization of the classical interference visibility of an asymmetric Mach–Zehnder interferometer based on planar lightwave circuit technology
Abstract Silicon-based devices offer great potential for quantum key distribution (QKD) with the benefits of miniaturization, scalability, complexity, and improved performance. Based on the planar lightwave circuit technology, a 200 ps delay-time asymmetric Mach–Zehnder interferometer (AMZI) decoding chip was designed and fabricated that can adjust the power ratio of the two arms by introducing a variable beam splitter.
Variable optical attenuators based on SOI with 3  μm top silicon layer
Abstract In this paper, electro-absorption variable optical attenuators (VOAs) have been designed and fabricated on silicon-on-insulator material with a 3 μm thick top silicon layer. We have simulated the impact of doping distance, doping width, doping depth, doping concentration, and doping length on VOA’s power consumption at 20 dB attenuation.
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