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Articles

Three-dimensional detection and quantification of defects in SiC by optical coherence tomography

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By Hui Chen, Jiawei Sun, Jiajie Ni, Junyin Li
| osapublishing.org
Abstract Silicon carbide (SiC) is widely used in high power electronic devices. However, defects on the SiC significantly reduce the yield and decrease the performance of SiC. Accurate detection of the defects is essential in the process control. We demonstrated a noninvasive three-dimensional (3D) defect detection method for SiC using optical coherence tomography (OCT).
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