Jyoti Sankar Sahu on Muck Rack

Jyoti Sankar Sahu

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Articles

Synergistic TiO 2 –SiO 2 –ZnO hybrid nanocoatings for high-performance corrosion protection: Experimental and theoretical insights

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By Harsh Gupta, Jyoti Sankar Sahu, G. Annie Celin
| Wiley Online Library Verified
PEER REVIEW For transparency, the peer review documents associated with this article are available at https://doi.org/10.1002/cjce.70468. Reviews Round 2 Editor Decision Letter 2026/05/04 Reviewer 1 Report 2026/04/29 Reviews Round 1 Editor Decision Letter 2026/01/29 Reviewer 2 Report 2026/01/12 Reviewer 1 Report 2025/12/31 DATA AVAILABILITY STATEMENT The data that supports the findings of this study are available in the supplementary material of this article.
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Strain‐Engineered Unified SiNx Deposition for Device Passivation and Capacitance Dielectric in GaN Monolithic Microwave Integrated Circuit

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By Jyoti Sankar Sahu, Bazila Parvez, Mahalaxmi Patil, Ranie S. J
| Wiley Online Library Verified
Conflict of Interest The authors declare no conflict of interest. Supporting Information Filename Description pssa202400068-sup-0001-SuppData-S1.pdf329 KB Supplementary Material References 1 , , , Proc. IEEE 2002, 90, 1022. 2 , , , CES Trans. Electr. Mach. Syst. 2019, 3, 54. 3 , , , , , IEEE Trans. Microw. Theory Tech. 2012, 60, 1764. 4 , , , , , , Appl. Phys. Lett. 2005, 87, 143501. 5 , , , Int. J. RF Microw. Comput. Aided Eng. 2020, 30, 22196. 6 , , , , , , J. Appl. Phys. 2019, 126, 115302. 7 , , , , , J. Phys. D: Appl.
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Asymmetric Gate and SiC Substrate Grooved InGaN Back‐Barrier AlGaN/GaN HEMTs for High‐Power RF Applications

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By Jyoti Sankar Sahu, Bazila Parvez, Subhajit Basak, Mahalaxmi Patil
| Wiley Online Library Verified
Conflict of Interest The authors declare no conflict of interest. Supporting Information Filename Description pssa202300708-sup-0001-SuppData-S1.pdf479.5 KB Supplementary Material References 1 , , , , in Proc. 2014 Mediterranean Microwave Symp. (MMS2014), Marrakech, Morocco 2014, pp. 1–4. 2 , , , , , , , , , , IEEE Electron Device Lett. 2022, 43, 354. 3 , , , , , , , , , IEEE Electron Device Lett. 2018, 39, 811. 4 , , , , , , , , IEEE Electron Device Lett. 2005, 26, 781. 5 , , , , , , AIP Adv.
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