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Exchange interaction for Mn acceptors in GaAs: Revealing its strong deformation dependence
Abstract In this paper we calculate the exchange interaction constant between the manganese ion inner electronic d-shell and GaAs valence band bound hole using their microscopic multiparticle wave functions. We reveal its parametric dependence on crystal lattice deformations and find that it could be about and even more than dozens of a percent when the strain tensor reaches values of 10−3−10−2.
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