Kaichen Zhu

Abstract Memristors have emerged as a promising hardware platform for in-memory computing, but many current devices suffer from channel material degradation during repeated resistive switching. This leads to high energy consumption and limited endurance. Here we introduce a molecular crystal memristor, of which the representative channel material, Sb2O3, possesses a molecular crystal structure where molecular cages are interconnected via van der Waals forces.

Abstract Two-dimensional materials hold promise for advanced complementary metal–oxide–semiconductor (CMOS) and beyond-CMOS electronics, including neuromorphic and in-memory computing. Hexagonal boron nitride (hBN) is particularly attractive for non-volatile resistive-switching devices (that is, memristors) due to its outstanding electronic, mechanical and chemical stability.

Abstract Two-dimensional (2D) semiconductors could potentially be used as channel materials in commercial field-effect transistors. However, the interface between 2D semiconductors and most gate dielectrics contains traps that degrade performance.