Kaifa Qi on Muck Rack

Kaifa Qi

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Breakdown Voltage Enhancement of AlGaN/GaN HEMTs on Semi-Insulating SiC Substrate by Optimizing Buffer Layer Structure

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By peng Cui, Jiacheng Dai, Kaifa Qi
| Wiley Online Library Verified
1 Introduction AlGaN/GaN HEMTs benefit from a unique heterojunction structure and material properties that enable the formation of two-dimensional electron gas (2DEG) to achieve high channel mobility and large breakdown field strengths (∼3.3 MV/cm) [1]. These advantages make it very attractive to be used in high power switching applications. However, the commercialization of GaN high electron mobility transistor (HEMT) devices is mainly in the field of medium and low voltage power devices.
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